Memory system

The memory system of claim wherein the probability information providing part comprises:

• a correction value generation part suitable for generating correction value based on the threshold voltage information;
• a probability information generation part suitable for generating the even probability information using the even data, and the odd probability information using the odd data;
• and
• a probability information correction part suitable for generating the corrected even probability information using the correction value and the even probability information, and the corrected odd probability information using the correction value and the odd probability information.

A memory system, comprising:

• a memory device suitable for outputting even data from even memory cells of a selected word line and odd data from odd memory cells of the selected word line using read voltages;
• a probability information generation part suitable for generating even probability information using the even data, and odd probability information using the odd data;
• a probability information correction part suitable for generating corrected even probability information using a correction value, which is determined according to a difference in characteristics between the even memory cells and the odd memory cells, and the even probability information, and corrected odd probability information using the correction value and the odd probability information;
• and
• an error correction part suitable for performing error correction operations on the even data according to the even probability information or the corrected even probability information, and the odd data according to the odd probability information or the corrected odd probability information.

A memory system, comprising

• a memory device suitable for reading first and second data from first and second memory cells with first and second groups of read voltages, respectively;
• and
• a controller suitable for performing error correction to the first and second data according to first and second probability information, respectively,
• wherein the controller modifies one of the first and second probability information based on characteristics of threshold voltage distributions of the first and second memory cells,
• wherein voltage levels of the first group and the second group are defined independently to each other based on the characteristics, and
• wherein the first and second probability information are defined independently from each other based on the characteristics and the read first and second data