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US 2015/0177992 A1Published application
Electronic device
AssigneeOnkyo Corporation
InventorKazunari ITO
Life of this patent
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Abstract
Restoration data is enabled to be written into a nonvolatile memory according to a simple process without using large capacity of a volatile memory. An SRAM writing section sets an updating request flag in a non-delay updating request flag region corresponding to a non-delay region where the restoration data is written. When the updating request flag is set in the non-delay updating request flag region, an EEPROM writing section writes the restoration data stored in the non-delay region corresponding to the non-delay updating request flag region into an EEPROM.
Claims4
An electronic device comprising:
- a volatile memory having a first region, a second region where restoration data that should be stored even when power supply to a self device is shut off is stored, and a first flag region where a first flag is set correspondingly to the second region;
- a nonvolatile memory;
- a first writing section that writes data including the restoration data into the volatile memory;
- and
- a second writing section that writes the restoration data stored in the second region into the nonvolatile memory, wherein
- the first writing section sets the first flag in the first flag region corresponding to the second region where the restoration data is written,
- when the first flag is set in the first flag region, the second writing section writes the restoration data stored in the second region corresponding to the first flag region into the nonvolatile memory.
4 more elements
Dependencies are inferred from the claim text.