Method for manufacturing board device
AssigneeJapan Display Inc.
InventorsYasunori FUKUMOTO, Toshihide JINNAI, Koji SATO
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AssigneeJapan Display Inc.
InventorsYasunori FUKUMOTO, Toshihide JINNAI, Koji SATO
Estimating the term…
According to one embodiment, provided is an array substrate that can effectively prevent an oxide conductive film and a silicon nitride film on the oxide conductive film from peeling without deteriorating reliability. A method for manufacturing the array substrate includes a surface treatment step and a nitride film forming step. In the surface treatment step, by plasma discharge, the oxide conductive film is cleaned without being reduced, and surface layers of the insulating film layer not covered by the oxide conductive film and portions of the insulating film layer in the regions covered by the oxide conductive film are etched to form recesses leading to portions under the oxide conductive film. In the nitride film forming step, successively from the surface treatment step, the silicon nitride film is formed by plasma CVD so as to cover the recesses and the oxide conductive film.
A method for manufacturing a board device that includes a substrate, an insulating film layer provided on the substrate, an oxide conductive film provided on portions of the insulating film layer, and a silicon nitride film provided on the oxide conductive film, comprising:
Dependencies are inferred from the claim text.