US 2015/0177545 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR

Abstract

In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

Claims30

Dependent claims

(canceled)

A semiconductor device comprising:

a first substrate;
a semiconductor layer over the first substrate, the semiconductor layer comprising a first channel formation region, a second channel formation region and a region between the first channel formation region and the second channel formation region;
a gate electrode over the first substrate;
a first insulating film interposed between the semiconductor layer and the gate electrode;
a second insulating film over the semiconductor layer, the gate electrode and the first insulating film;
a source wiring over the second insulating film;
a drain wiring over the second insulating film;
a first organic film over the source wiring and the drain wiring;
a first conductive film over the first organic film;
a third insulating film over the first conductive film;
a second organic film over the third insulating film;
a second conductive film over the third insulating film;
a liquid crystal material over the second conductive film;
a second substrate over the liquid crystal material,
wherein the first conductive film and the second conductive film overlap with each other,
wherein the second organic film and the first channel formation region overlap with each other,
wherein the second organic film and the second conductive film overlap with each other,
wherein the second conductive film is electrically connected to one of the source wiring and the drain wiring,
wherein each of the first channel formation region and the second channel formation region overlaps with the gate electrode, and the region between the first channel formation region and the second channel formation region does not overlap with the gate electrode,
wherein the second channel formation region overlaps with the other of the source wiring and the drain wiring,
wherein the semiconductor layer comprises crystalline silicon.

18 more elements

A semiconductor device comprising:

a first substrate;
a semiconductor layer over the first substrate, the semiconductor layer comprising a first channel formation region, a second channel formation region and a region between the first channel formation region and the second channel formation region;
a gate electrode over the first substrate;
a first insulating film interposed between the semiconductor layer and the gate electrode;
a second insulating film over the semiconductor layer, the gate electrode and the first insulating film;
a source wiring over the second insulating film;
a drain wiring over the second insulating film;
a first organic film over the source wiring and the drain wiring;
a first conductive film over the first organic film;
a third insulating film over the first conductive film;
an alignment film over the third insulating film;
a second conductive film over the third insulating film;
a liquid crystal material over the second conductive film;
a second substrate over the liquid crystal material,
wherein the first conductive film and the second conductive film overlap with each other,
wherein the alignment film and the first channel formation region overlap with each other,
wherein the alignment film and the second conductive film overlap with each other,
wherein the second conductive film is electrically connected to one of the source wiring and the drain wiring,
wherein each of the first channel formation region and the second channel formation region overlaps with the gate electrode, and the region between the first channel formation region and the second channel formation region does not overlap with the gate electrode,
wherein the second channel formation region overlaps with the other of the source wiring and the drain wiring,
wherein the semiconductor layer comprises crystalline silicon,
wherein each of the source wiring and the drain wiring overlaps with the gate electrode.

19 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/640,045Filed 6 Mar 2015

Priority

JP 11-03362312 Feb 1999

Published

25 Jun 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
G02F 1/136209
Active matrix addressed cells: light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally…
G02F 1/136213
Active matrix addressed cells: storage capacitors associated with the pixel electrode
G02F 1/136286
Active matrix addressed cells: wiring, e.g. gate line, drain line

Family

Application09/502,675Division · filed 11 Feb 2000

Application10/913,415Division · filed 9 Aug 2004

Application13/230,997Continuation · filed 13 Sep 2011

Application14/499,313Continuation · filed 29 Sep 2014

Application14/640,045Continuation

Application13/230,997Division

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