Bonding of heterogeneous material grown on silicon to a silicon photonic circuit
AssigneeThe Regents of the University of California
InventorsJohn E. BOWERS, Jock BOVINGTON
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Abstract
A method of fabricating a heterogeneous semiconductor wafer includes depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate. The first wafer is then bonded to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer. The semiconductor substrate associated with the first wafer is removed to expose the III-V type semiconductor epitaxial layer.
Claims25
A method of fabricating a heterogeneous semiconductor wafer, the method comprising:
- depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate;
- bonding the first wafer to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer;
- and
- removing the semiconductor substrate associated with the first wafer to expose the III-V type semiconductor epitaxial layer.
A heterogeneous wafer comprising:
- a first wafer having a semiconductor substrate and a patterned silicon layer;
- and
- a second wafer having a semiconductor substrate and a III-V type semiconductor epitaxial layer;
- wherein the second wafer is bonded to the first wafer such that the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer.
Dependencies are inferred from the claim text.