Manufacturing method of polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device

Abstract

There are provided a manufacturing method of a polishing agent capable of suppressing occurrence of a polishing defect to a surface to be polished and of performing CMP at a high polishing speed, and a polishing method. The manufacturing method of the polishing agent is a manufacturing method including injecting a slurry containing cerium oxide particles and water at a predetermined injecting pressure and colliding the injected slurry against the slurry each other or against a rigid body with a modified Mohs hardness of 8 or more so that a rate of change of an average primary particle diameter of the cerium oxide particles before and after collision may become within 20%.

Dependencies are inferred from the claim text.