Eliminating or reducing programming errors when programming flash memory cells
AssigneeLSI Corporation
InventorsYu Cai, Yunxiang Wu, Zhengang Chen, Erich Haratsch
Life of this patent
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AssigneeLSI Corporation
InventorsYu Cai, Yunxiang Wu, Zhengang Chen, Erich Haratsch
Estimating the term…
Mis-programming of MSB data in flash memory is avoided by maintaining a copy of LSB page data that has been written to flash memory and using the copy rather than the LSB page data read out of the flash cells in conjunction with the MSB values to determine the proper reference voltage ranges to be programmed into the corresponding flash cells. Because the copy is free of errors, using the copy in conjunction with the MSB values to determine the proper reference voltage ranges for the flash cells ensures that mis-programming of the reference voltage ranges will not occur.
A data storage system comprising:
A method for programming flash cells of a flash memory device, the method comprising:
A computer program comprising computer instructions for execution by one or more processors of a controller of a solid state drive (SSD) device of a data storage system, the computer instructions being stored on a non-transitory computer-readable medium, the computer instructions comprising:
Dependencies are inferred from the claim text.