Precursors for CVD Silicon Carbo-Nitride Films

A method of forming via a vapor deposition process a dielectric film having the formula SixCyNz, the method comprising:

• providing a substrate within a vapor deposition chamber;
• introducing into the vapor deposition chamber an aminosilane comprising the following formula B:
• wherein R is selected from the group consisting of t-pentyl and cyclohexyl groups;
• and
• introducing a nitrogen source selected from the group consisting of hydrazine, dimethyl hydrazine, or ammonia into the vapor deposition chamber wherein the nitrogen source reacts with the aminosilane to provide the dielectric film on the substrate
• wherein the dielectric film is formed at a temperature of 550° C. or less.

A method of forming via a vapor deposition process a dielectric film having the formula SixCyNz, the method comprising:

• providing a substrate within a vapor deposition chamber;
• introducing into the vapor deposition chamber an aminosilane comprising the following formula C:
• wherein R is selected from a C1-C10 linear alkyl group;
• a C3-C10 branched or cyclic groups;
• an aromatic group;
• a C3-C10 heterocyclic group;
• or a silyl group, and R2 representing a single bond, a (CH2), chain wherein n is from 1-6, a ring, SiR2, or SiH2;
• and
• introducing a nitrogen source selected from the group consisting of hydrazine, dimethyl hydrazine, or ammonia into the vapor deposition chamber wherein the nitrogen source reacts with the aminosilane to provide the dielectric film on the substrate
• wherein the dielectric film is formed at a temperature of 550° C. or less.

A composition for depositing a dielectric film comprising:

• an aminosilane comprising the following formula B:
• wherein R is selected from the group consisting of t-pentyl and cyclohexyl groups;
• and
• optionally a precursor selected from the group consisting of bis-tert-butylaminosilane, tris-iso-propylaminosilane, bis-diethylaminosilane, tris-dimethylaminosilane, and bis-iso-propylaminosilane.

A composition for depositing a dielectric film comprising:

• an aminosilane comprising the following formula C:
• wherein R is selected from a C1-C10 linear alkyl group;
• a C3-C10 branched or cyclic groups;
• an aromatic group;
• a C3-C10 heterocyclic group;
• or a silyl group, and R2 representing a single bond, a (CH2), chain wherein n is from 1-6, a ring, SiR2, or SiH2;
• and
• optionally a precursor selected from the group consisting of bis-tert-butylaminosilane, tris-iso-propylaminosilane, bis-diethylaminosilane, tris-dimethylaminosilane, and bis-iso-propylaminosilane.