Method for fabricating semiconductor structure, and solid precursor delivery system

A method for modifying a resistance film source in a semiconductor fabrication, comprising:

• solving a solid precursor in an organic solvent into an intermediate;
• recrystallizing the intermediate to form solid granules;
• transporting the solid granules to a collecting room;
• vaporizing the solid granules by to form a film-forming gas;
• and
• to delivering the film-forming gas to a deposition chamber by a carrier gas.

A solid precursor delivery system for a semiconductor fabrication, comprising:

• a recrystallization reservoir, comprising:
• cooling elements around the recrystallization reservoir;
• a precursor entry port, wherein a solid precursor enters the recrystallization reservoir through the precursor entry port;
• a solvent entry port, wherein an organic solvent enters the recrystallization reservoir through the solvent entry port;
• and
• a granule exit port;
• a gas tank;
• a deposition chamber;
• and
• a collecting room, comprising:
• heating elements around the collecting room;
• a granule entry port connecting to the granule exit port;
• a gas entry port connecting to the gas tank;
• and
• a gas exit port connecting to the deposition chamber.