Resist composition and method of forming resist pattern

A method of forming a resist pattern, comprising:

• a step (1) in which a resist composition comprising a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid, a photo-base generator component (C) that generates a base upon exposure, an acidic compound component (G) and an amine (D) is applied to a substrate to form a resist film;
• a step (2) in which the resist film is subjected to exposure;
• a step (3) in which baking is conducted after the step (2), such that, at an exposed portion of the resist film, the base generated from the photo-base generator component (C) upon the exposure and the acidic compound component (G) are neutralized, and at an unexposed portion of the resist film, the solubility of the base component (A) in an alkali developing solution is increased by the action of the acidic compound component (G);
• and
• a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed, wherein
• the amount of the amine (D) is 1 mol or more, per 1 mol of the acidic compound component (G).

A method of forming a resist pattern, comprising:

• a step (1) in which a resist composition comprising a base component (A) that exhibits increased solubility in an alkali developing solution under the action of acid, a photo-base generator component (C) that generates a base upon exposure, and an acidic compound component (G) is applied to a substrate to form a resist film;
• a step (2) in which the resist film is subjected to exposure;
• a step (3) in which baking is conducted after the step (2), such that, at an exposed portion of the resist film, the base generated from the photo-base generator component (C) upon the exposure and the acidic compound component (G) are neutralized, and at an unexposed portion of the resist film, the solubility of the base component (A) in an alkali developing solution is increased by the action of the acidic compound component (G);
• and
• a step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed, wherein
• the acidic compound component (G) comprises a compound (G1C) composed of a nitrogen-containing cation having a pKa value of 7 or less and a counteranion.