Negative resist composition and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Masayoshi Sagehashi
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Abstract
A negative resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. R1 is H or methyl, X is a single bond or —C(═O)—O—R4—, R2 is a single bond or C1-C4 alkylene, R3 is C2-C8 alkylene, R4 is a single bond or C1-C4 alkylene, and 0<a≦1.0. The composition exhibits a high resolution due to controlled acid diffusion and forms a resist film which is unsusceptible to swell in the developer and hence to pattern collapse.
Claims7
A negative resist composition comprising a polymer comprising recurring units (a) of the general formula (1) and having a weight average molecular weight of 1,000 to 500,000 as base resin,
- wherein R1 is hydrogen or methyl, X is a single bond or —C(═O)—O—R4—, R2 is a single bond or C1-C4 alkylene group, R3 is a linear C2-C8 alkylene group, R4 is a single bond or C1-C4 alkylene group, and a is in the range:
- 0<a≦1.0.
Dependencies are inferred from the claim text.