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US 2015/0147686 A1Published application
Extreme Ultraviolet Lithography Process And Mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Cheng Lu, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
Life of this patent
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Abstract
A low EUV reflectivity mask includes a low thermal expansion material (LTEM) layer, a low EUV reflectivity (LEUVR) multilayer over the LTEM layer in a first region, a high EUV reflectivity (HEUVR) multilayer over the LTEM layer in a second region and a patterned absorption layer over the LEUVR multilayer and the HEUVR multilayer.
Claims20
A low extreme ultraviolet reflective (LEUVR) mask comprising:
- a low thermal expansion material (LTEM) layer;
- a low extreme ultraviolet reflectivity (LEUVR) multilayer over a first region of the LTEM layer;
- a high extreme ultraviolet reflectivity (HEUVR) multilayer over a second region of the LTEM;
- and
- a patterned absorption layer over the LEUVR multilayer and the HEUVR multilayer.
2 more elements
An extreme ultraviolet lithography (EUVL) process comprising:
- receiving a mask pair having at least one common pattern, the mask pair including:
- an extreme ultraviolet (EUV) mask having a first EUV reflectivity r1;
- and
- a low EUV reflectivity mask having a second EUV reflectivity r2;
- receiving a substrate coated with a photoresist layer;
- receiving an EUV scanner equipped with an EUV radiation;
- performing a first exposure process to the substrate, by using the EUV scanner and the EUV mask, wherein the first exposure process is conducted according to a first exposure dose matrix;
- and
- performing a second exposure process to the substrate, by using the EUV scanner and the low EUV reflectivity mask, wherein the second exposure process is conducted according to a second exposure dose matrix.
6 more elements
A low extreme ultraviolet reflective (LEUVR) mask comprising:
- a low thermal expansion material (LTEM) layer;
- a first extreme ultraviolet reflectivity (EUVR) multilayer over the LTEM layer, having an EUV reflectivity larger than 30%;
- a second extreme ultraviolet reflectivity (EUVR) multilayer over a portion of the first EUVR to form a third EUVR multilayer, which has the first EUVR as its bottom portion and the second EUVR as its upper portion, wherein the third EUVR multilayer has an EUV reflectivity less than 2%;
- and
- a patterned absorption layer over the first EUVR multilayer and the second EUVR multilayer.
2 more elements
Dependencies are inferred from the claim text.