Atomic Layer Deposition Of Films Comprising Silicon, Carbon And Nitrogen Using Halogenated Silicon Precursors

A method of depositing a film comprising Si, C and N, the method comprising:

• a. exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine;
• b. exposing the substrate surface to a nitrogen precursor to provide a film;
• and
• c. exposing the film to a densification plasma, with the proviso that if the halogenated silicon precursor comprises the halogenated aminosilane or the halogenated silane, then the nitrogen precursor also contains carbon.