Single crystal silicon ingot and wafer, and apparatus and method for growing said ingot
AssigneeLG SILTRON INCORPORATION a corporation
InventorsYoung Ho Hong, Jung Ha Hwang, Il Seon Cha
Life of this patent
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Abstract
The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region.
Claims26
A single-crystal silicon ingot and wafer comprising a transition region having predominant crystal defects having a size of 10 nm to 30 nm among crystal defects included in at least one of a vacancy predominant non-defective region and an interstitial predominant non-defective region.
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An apparatus of growing a single-crystal silicon ingot, the apparatus comprising:
- a crucible configured to receive a silicon melt therein;
- a heater installed around the crucible to apply heat to the crucible;
- and
- a magnetic field generator configured to apply a magnetic field to the crucible such that a maximum magnetic plane (MGP) is created at a position determined according to a position of a maximum heat radiation point of the heater.
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A method of growing a single-crystal silicon ingot performed by an apparatus of growing a single-crystal silicon ingot, the apparatus comprising a crucible configured to receive a silicon melt therein, a heater installed around the crucible to apply heat to the crucible and a magnetic field generator configured to apply a magnetic field to the crucible, the method comprising:
- determining a position of a maximum heat radiation point of the heater;
- determining a position of a maximum magnetic plane (MGP) according to the determined position of the maximum heat radiation point;
- and
- applying the magnetic field to the crucible so as to create the MGP at the determined position.
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Dependencies are inferred from the claim text.