Semiconductor light emitting element

A semiconductor light emitting element comprising

• an n-type layer containing a group III nitride semiconductor, an active layer, and a p-type layer,
• wherein the n-type layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the group III nitride semiconductors A and each of the group III nitride semiconductors B being stacked in each of the superlattice layers,
• a relationship Eg (A)>Eg (B) holds, where Eg (A) denotes a band gap of the group III nitride semiconductor A, and Eg (B) denotes a band gap of the group III nitride semiconductor B,
• the group III nitride semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm−3,
• the group III nitride semiconductor A has a film thickness of at most 5 nm, and
• a current is injected in a stacking direction of the superlattice layers.