Memory system including multi-level memory cells and programming method using different program start voltages
AssigneeSamsung Electronics Co., Ltd.
InventorsBONG-YONG LEE, YU-SIK CHOI
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Abstract
A method of programming multi-level memory cells includes defining a first program start voltage and a second program start voltage higher than the first program start voltage, programming first memory cells among the MLC to the first program state using a program operation that begins programming of the first memory cells at the first program start voltage, and programming second memory cells among the MLC to the second program state using a program operation that begins programming of the second memory cells at the second program start voltage.
Claims20
A method of programming a memory system including multi-level memory cells (MLC) configured to be programmed in accordance with a first program state and a second program state, wherein the first program state is indicated by a first threshold voltage distribution and the second program state is indicated by a second threshold voltage distribution having a higher level than the first threshold voltage distribution, the method comprising:
- defining a first program start voltage and a second program start voltage higher than the first program start voltage;
- programming first memory cells among the MLC to the first program state using a program operation that begins programming of the first memory cells at the first program start voltage;
- and
- programming second memory cells among the MLC to the second program state using a program operation that begins programming of the second memory cells at the second program start voltage.
A method of programming a memory system including multi-level memory cells (MLC) configured to be programmed in accordance with first through Nth program states, wherein each one of the first through Nth program states is respectively indicated by a successively higher threshold voltage distribution, the method comprising:
- defining first through Nth program start voltages respectively corresponding to the first through Nth program states;
- programming an Mth set of MLC to an Mth program state among the first through Nth program states by initially applying an Mth program start voltage, ‘N’ being a natural number greater than 2, and ‘M’ being a natural number less than or equal to N,
- wherein the Mth program start voltage is higher than a first program start voltage initially applied during the programming a first set of MLC to the first program state, and the Mth program start voltage is lower than or equal to an Nth program start voltage initially applied during the programming of an Nth set of MLC to the Nth program state.
A method of programming a memory system including multi-level memory cells (MLC) configured to be programmed in accordance with a selected one of first through Nth program states, wherein each one of the first through Nth program states is indicated by a respective and successively higher threshold voltage distribution, the method comprising:
- defining respective first through Kth program start voltages;
- grouping at least the first program state into a first group of program states, and grouping at least the Nth program state into a second group of program states to define K groups of program states;
- programming a first set of MLC to the first program state by initially applying a first program start voltage;
- programming a Jth set of MLC to a Jth program state, and thereafter programming a Jth+1 set of MLC to a Jth+1 program state by initially applying a Jth program start voltage higher than the first program start voltage, wherein the Jth program state and the Jth+1 program state are grouped in an Dth group of program states,
- wherein ‘N’, ‘K’, ‘J’ and ‘D’ are respective natural numbers, N being greater than 3, K being less than N, J being less than N and greater than 1, and D being less than K.
Dependencies are inferred from the claim text.