Sram write-assisted operation with vdd-to-vcs level shifting
AssigneeInternational Business Machines Corporation
InventorHarold Pilo
Life of this patent
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Abstract
An electronic circuit and a method for driving data writes to an SRAM bit cell in an electronic circuit. The electronic circuit translates a first write signal in a lower voltage domain to a second write signal in a higher voltage domain. Based, at least in part, on the second write signal, the electronic circuit controls a discharge of a voltage of a data write line to a ground voltage level. The electronic circuit provides a negative voltage boost to the data write line after the voltage of the data write line has been discharged to reach or exceed a threshold value relative to the ground voltage level.
Claims17
A method of driving data writes to an SRAM bit cell in an electronic circuit, the method comprising:
- translating, by an electronic circuit, a first write signal in a lower voltage domain to a second write signal in a higher voltage domain;
- controlling, by the electronic circuit, a discharge of a voltage of a data write line to a ground voltage level, wherein control of the discharge is based, at least in part, on the second write signal;
- and
- providing, by the electronic circuit, a negative voltage boost to the data write line after the voltage of the data write line has been discharged to reach or exceed a threshold value relative to the ground voltage level.
An electronic circuit comprising:
- a first circuit component configured to translate a first write signal in a lower voltage domain to a second write signal in a higher voltage domain;
- a second circuit component configured to control a discharge of a voltage of a data write line to a ground voltage level, wherein control of the discharge is based, at least in part, on the second write signal;
- and
- a third circuit component configured to provide a negative voltage boost to the data write line after the voltage of the data write line has been discharged to reach or exceed a threshold value relative to the ground voltage level.
An electronic circuit comprising:
- a first circuit component configured to translate a first write signal in a lower voltage domain to a second write signal in a higher voltage domain;
- a second circuit component configured to control a discharge of a voltage of a data write line to a ground voltage level, wherein control of the discharge is based, at least in part, on the second write signal;
- and
- a third circuit component configured to provide a negative voltage boost to the data write line after the voltage of the data write line has been discharged to reach or exceed a threshold value relative to the ground voltage level;
- wherein:
- translation of the first write signal to the second write signal includes utilization of a partially-broken feedback system to isolate an unselected data write line from the negative voltage boost;
- the negative voltage boost is applied only if at least one of two complementary data write lines is selected for writing;
- the negative voltage boost is applied by a driver in the higher voltage domain of the electronic circuit;
- and
- the electronic circuit, and an SRAM array core that includes a plurality of SRAM bit cells, does not contain a power supply for the lower voltage domain.
Dependencies are inferred from the claim text.