Solid-state imaging device
AssigneeKabushiki Kaisha Toshiba
InventorNagataka TANAKA
Life of this patent
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Abstract
A solid-state imaging device includes a first chip and a second chip. The first chip includes a pixel array in which a plurality of photodiodes corresponding to each pixel of a captured image is disposed in a two-dimensional array shape. Each photodiode generates a pixel signal corresponding to a signal charge generated by the photoelectric conversion of the photodiode. The first chip is stacked on the second chip that includes a memory storing the pixel signals generated from the first chip, where the memory is located outside a projection region formed by projecting the pixel array and in a thickness direction of the first chip.
Claims20
A solid-state imaging device comprising:
- a first chip that includes a pixel array in which a plurality of photodiodes disposed in a two-dimensional array, and each photodiode generates a pixel signal corresponding to a charge generated by photoelectric conversion in the photodiode;
- and
- a second chip in a stacked arrangement with the first chip, and including a memory unit configured to store the pixel signals generated by the plurality of photodiodes on the first chip, the memory unit being located outside a projection region defined by a projection, in a stacking direction of the first and second chips, of the area of the pixel array onto a surface of second chip.
A solid state imaging device, comprising:
- a first chip that includes a pixel array, each pixel in the array generating a pixel signal corresponding to an amount of light incident on the pixel;
- a vertical shift register on the first chip, adjacent to the pixel array, and configured to generate row selection signals for the pixel array;
- a second chip in a stacked arrangement with the first chip and including an analog-to digital converter (ADC) unit that converts the pixel signals from the pixel array to digital pixel signals;
- a memory unit on the second chip configured to store digital pixel signals, the memory unit being disposed on the second chip outside of a projection region of the pixel array, the projection region being defined by a projection, in a stacking direction of the first and second chips, of the area of the pixel array on to a surface of the second chip;
- and
- a plurality of through electrodes that penetrate the first chip in the stacking direction and electrically connect to the second chip.
A solid state imaging device, comprising:
- a first chip that includes a pixel array that includes a matrix of pixel units, each pixel unit including a photodiode that converts light to a pixel signal;
- a second chip in a stacked arrangement with the first chip and including a storage unit that stores pixel signals, the storage unit being positioned outside a projection region of the pixel array, the projection region being defined by a projection, in a stacking direction of the first and second chips, of the area of the pixel array on to a surface of the second chip;
- and
- a light shielding film covering the first chip outside of the pixel array.
Dependencies are inferred from the claim text.