Redistribution structures for microfeature workpieces
AssigneeMicron Technology, Inc.
InventorMark S. Johnson
Life of this patent
Estimating the term…
Abstract
Microfeature dies with redistribution structures that reduce or eliminate line interference are disclosed. The microfeature dies can include a substrate having a bond site and integrated circuitry electrically connected to the bond site. The microfeature dies can also include and a redistribution structure coupled to the substrate. The redistribution structure can include an external contact site configured to receive an electric coupler, a conductive line that is electrically connected to the external contact site and the bond site, and a conductive shield that at least partially surrounds the conductive line.
Claims20
A method for forming a redistribution structure on a microfeature die, comprising:
- forming a conductive line, wherein the conductive line electrically connects a bond site of the microfeature die to an external contact site;
- and
- forming a conductive shield at least partially enclosing at least a portion of a length of the conductive line, wherein the conductive shield is electrically grounded.
A method for reducing interference in a microfeature die having a redistribution structure and a substrate, comprising:
- transmitting an electrical signal via a first conductive line electrically connecting a bond site of the microfeature die and an external contact site;
- and
- shielding the transmitted electrical signal from emitting electromagnetic energy to a second conductive line proximate to the first conductive line.
A method for forming at least one redistribution structure on a microfeature die, the method comprising:
- forming a first dielectric layer on a substrate having a bond site;
- forming a first metal layer on the first dielectric layer;
- forming an opening in the first metal layer, wherein the opening in the first metal layer exposes a portion of the first dielectric layer, and wherein the portion of the first dielectric layer is adjacent to the bond site;
- forming a second dielectric layer on the first metal layer and on the exposed portion of the first dielectric layer;
- removing a first portion of the second dielectric layer to form a first connection opening exposing a first portion of the first metal layer;
- removing a second portion of the second dielectric layer to form a second connection opening exposing a second portion of the first metal layer, wherein the first connection opening extends parallel to the second connection opening with a section of the second dielectric layer positioned therebetween;
- forming an opening extending through the first dielectric layer and the second dielectric layer, wherein the opening extending through the first dielectric layer and the second dielectric layer exposes the bond site;
- forming a conductive line that extends along the section of the second dielectric layer and into the opening extending through the first dielectric layer and the second dielectric layer, wherein the conductive line and the bond site are electrically coupled;
- forming a third dielectric layer on the conductive line, wherein forming the third dielectric layer includes encapsulating exposed portions of the conductive line;
- and
- forming a second metal layer on the third dielectric layer, wherein the second metal layer is electrically coupled to the first metal layer and extends from the first exposed portion of the first metal layer, over the third dielectric layer, and to the second exposed portion of the first metal layer.
Dependencies are inferred from the claim text.