US 2015/0145587 A1Published application

High frequency semiconductor switch circuit and high frequency radio system including same

AssigneePanasonic Intellectual Property Management Co., Ltd.

InventorsAtusi SIGETANI, Takahito MIYAZAKI, Yusuke NOZAKI, Masaru FUKUSEN

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Abstract

A path switching FET and a shunt FET are separated from each other by a capacitor. The gates of the path switching FET and the shunt FET are controlled using an inverter circuit having a first internal power supply voltage (e.g., 2.5 V) as a power supply. The sources and drains of the path switching FET and the shunt FET are controlled using an inverter circuit having a second internal power supply voltage (e.g., 1.25 V) which is smaller than the first internal power supply voltage, as a power supply.

A high-frequency semiconductor switch circuit comprising:

one common input/output terminal, two or more separate input/output terminals, and two or more control terminals corresponding to the separate input/output terminals;
two or more path switching FET blocks, one block being provided between the common input/output terminal and each of the two or more separate input/output terminals;
one or more shunt FET blocks, one block being provided between the ground and each of at least one of the two or more separate input/output terminals;
a direct-current blocking capacitor provided at both ends of each of the two or more path switching FET blocks;
a direct-current blocking capacitor provided at both ends of each of the one or more shunt FET blocks;
and
a source bias resistor provided for each of the two or more path switching FET blocks and for each of the one or more shunt FET blocks, wherein
a control voltage input to each of the two or more control terminals is applied to the gate of a corresponding one of the two or more path switching FET blocks so that at least one of high-frequency signal paths between the common input/output terminal and the respective separate input/output terminals is caused to be in the conducting state while the other high-frequency signal paths are caused to be in the non-conducting state,
a control voltage which is an inverted version of a voltage input to each of the two or more control terminals is applied to the gate of a corresponding one of the one or more shunt FET blocks,
a control voltage which has an inverted polarity and a smaller absolute value compared to a voltage input to each of the two or more control terminals, is applied to the source or drain of a corresponding one of the two or more path switching FET blocks, and
a control voltage which has a non-inverted polarity and a smaller absolute value compared to a voltage input to each of the two or more control terminals, is applied to the source or drain of a corresponding one of the one or more shunt FET blocks.

8 more elements

Facts

Application

14/612,195Filed 2 Feb 2015

Priority

JP 2012-1769869 Aug 2012

Published

28 May 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H03K 17/689
The devices being field-effect transistors: with galvanic isolation between the control circuit and the output circuit
H03K 17/162
In field-effect transistor switches: without feedback from the output circuit to the control circuit
H03K 17/6877
The devices being field-effect transistors: the control circuit comprising active elements different from those used in the output circuit
H03K 17/693
The devices being field-effect transistors: switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Abstract

Claims7