Method for manufacturing semiconductor device and alignment mark of semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming an insulating film above a stacked body including a first layer as an uppermost layer;
• forming a mark having a first opening above the stacked body via the insulating film;
• etching the insulating film exposed from the first opening and the stacked body located under the first opening so as to form a second opening in the insulating film and the stacked body, the mark being transferred to the second opening;
• and
• forming a second layer including a same material as the first layer in the second opening.

A method for manufacturing a semiconductor device comprising:

• forming an insulating layer covering a first stacked body disposed in a memory cell region and a second stacked body disposed in a mark region, a height of a portion of the insulating layer above the second stacked body being lower than a height of a portion of the insulating layer above the first stacked body;
• forming a mark having a first opening above the second stacked body via the insulating layer;
• etching the insulating layer exposed from the first opening and the second stacked body located under the first opening in the mark region so as to form a second opening in the insulating layer and the second stacked body in the mark region, the mark being transferred to the second opening;
• forming a second layer in the second opening in the mark region and forming the second layer on the insulating layer in the memory cell region and the mark region;
• and
• removing the second layer formed on the insulating layer and the insulating layer in the memory cell region and leaving the second layer above the insulating layer with a lower height than the height of the portion of the insulating layer above the first stacked body so as to cover the second layer formed in the second opening with the second layer in the mark region.