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US 2015/0145104 A1Published application
Integrated capacitor and method for producing the same
AssigneeFraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
InventorsAnton BAUER, Tobias ERLBACHER, Holger SCHWARZMANN
Life of this patent
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Abstract
An integrated capacitor includes a substrate with a first main surface area and an opposing second main surface area. A capacitor structure with a dielectric layer is integrated in the first main surface area. A compensation structure with a compensation layer is integrated in the second main surface area. The ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure.
Claims28
Integrated capacitor, comprising:
- a substrate with a first main surface area and an opposing second main surface area;
- a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area;
- and
- a compensation structure with a compensation layer that is integrated in the second main surface area;
- wherein a ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure.
2 more elements
Integrated capacitor comprising:
- a substrate with a first main surface area and an opposing second main surface area;
- a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area;
- and
- a compensation structure with a compensation layer, wherein the compensation structure is integrated in the second main surface area;
- wherein the compensation structure is implemented to at least partly compensate, based on a material tension between the compensation layer and the substrate, material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the mechanical tension between the dielectric layer and the substrate is reduced.
2 more elements
Integrated capacitor, comprising:
- a substrate with a first main surface area and an opposing second main surface area;
- a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area;
- and
- a compensation structure with a compensation layer that is integrated in the second main surface area;
- wherein a ratio between a surface enlargement of the second main surface area effected by the compensation structure with regard to a theoretical surface of the substrate in the second main surface area when the compensation structure is absent, corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure with regard to a theoretical surface of the substrate in the first main surface area when the capacitor structure is absent;
- wherein structures of the compensation structure are arranged laterally offset with respect to structures of the capacitor structure.
3 more elements
Integrated capacitor comprising:
- a substrate with a first main surface area and an opposing second main surface area;
- a capacitor structure with a dielectric layer, wherein the capacitor structure is integrated in the first main surface area;
- and
- a compensation structure with a compensation layer, wherein the compensation structure is integrated in the second main surface area;
- wherein the compensation structure is implemented to at least partly compensate, based on a material tension between the compensation layer and the substrate, material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the material tension between the dielectric layer and the substrate is reduced;
- wherein structures of the compensation structure are arranged laterally offset with respect to structures of the capacitor structure.
3 more elements
Method for producing an integrated capacitor, comprising:
- providing a substrate with a first main surface area and an opposing second main surface area;
- forming a capacitor structure with a dielectric layer in the first main surface area;
- and
- forming a compensation structure with a compensation layer in the second main surface area;
- wherein a ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure;
- or
- wherein the compensation structure is implemented to at least partly compensate, based on a material tension between the compensation layer and the substrate, material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the mechanical tension between the dielectric layer and the substrate is reduced.
4 more elements
Method for producing an integrated capacitor, comprising:
- providing a substrate with a first main surface area and an opposing second main surface area;
- forming a capacitor structure with a dielectric layer in the first main surface area;
- and
- forming a compensation structure with a compensation layer in the second main surface area, such that structures of the compensation structure are arranged laterally offset with regard to structures of the capacitor structure;
- wherein a ratio between a surface enlargement of the second main surface area effected by the compensation structure with regard to a theoretical surface of the substrate in the second main surface area when the compensation structure is absent, corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure with regard to a theoretical surface of the substrate in the first main surface area when the capacitor structure is absent;
- or
- wherein the compensation structure is implemented to at least partly compensate, based on a material tension between the compensation layer and the substrate, material tension between the dielectric layer and the substrate in the substrate, such that a deformation of the substrate induced by the mechanical tension between the dielectric layer and the substrate is reduced.
4 more elements
Dependencies are inferred from the claim text.