Mems devices utilizing a thick metal layer of an interconnect metal film stack
AssigneeIntel Corporation
InventorsRashed Mahameed, Kristen L. Dorsey, Mamdouh O. M M Abdelmejeed, Mohamed A. Abdelmoneum
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AssigneeIntel Corporation
InventorsRashed Mahameed, Kristen L. Dorsey, Mamdouh O. M M Abdelmejeed, Mohamed A. Abdelmoneum
Estimating the term…
A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness that is significantly greater than that of the thin metal layer for increased mass. The proof mass further includes a first sensing structure comprising the thin metal layer, but lacking the thick metal layer for small feature sizes and increased capacitive coupling to a surrounding fame that includes a second sensing structure comprising the thin metal layer, but also lacking the thick metal layer. In further embodiments, the frame is released and includes regions with the thick metal layer to better match film stress-induced static deflection of the proof mass.
1-20. (canceled)
A Microelectromechanical System (MEMS), comprising:
A Microelectromechanical System (MEMS) gyroscope or accelerometer, comprising:
A method of forming a Microelectromechanical System (MEMS), the method comprising:
Dependencies are inferred from the claim text.