Semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• a substrate;
• a device layer on the substrate;
• and
• a plurality of isolation structures passing through the substrate and through the device layer, wherein the device layer is formed on the substrate by performing a process including:
• providing the substrate having the plurality of isolation structures, a top surface of the plurality of isolation structures being higher than a top surface of the substrate;
• forming the device layer on the substrate and on the plurality of isolation structures;
• polishing the device layer using a polishing process, such that the top surface of the plurality of isolation structures are exposed, with residue remaining on the device layer and on the plurality of isolation structures;
• and
• removing the residue from the device layer and from the plurality of isolation structures using a non-polishing-removal process, such that the top surface of the plurality of isolation structures and a top surface of the device layer are substantially leveled and smooth.