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US 2015/0145016 A1Published application
Three-dimensional nonvolatile memory devices including interposed floating gates
AssigneeSamsung Electronics Co., Ltd.
InventorsByoungkeun Son, Hansoo Kim, Jinho Kim, Kihyun Kim
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Abstract
Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.
Claims15
A three-dimensional nonvolatile memory device, comprising:
- a stacked structure on a substrate and including a first gate electrode and a second gate electrode vertically stacked with an insulating layer therebetween, the first gate electrode having a width different from a width of the second gate electrode;
- a plurality of channel pillars penetrating the stacked structure and connected to the substrate;
- and
- a plurality of data storage layers, a respective one of which is between the second gate electrode and a respective one of the channel pillars and surrounding the channel pillars,
- wherein the data storage layers are spaced apart from each other.
2 more elements
A three-dimensional nonvolatile memory device, comprising:
- a first gate electrode on a substrate;
- a stacked structure including a plurality of second gate electrodes and insulating layers which are stacked alternately and repeatedly on the first gate electrode;
- a plurality of channel pillars penetrating the stacked structure and the first gate electrode and connected to the substrate;
- and
- a plurality of data storage layers, a respective one of which is between a respective one of the second gate electrodes and a respective one of the channel pillars and surrounding the channel pillars,
- wherein the data storage layers are vertically and horizontally spaced apart from each other.
3 more elements
Dependencies are inferred from the claim text.