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US 2015/0145013 A1Published application
Semiconductor device and method for forming the same
AssigneeSK hynix Inc.
InventorSang Min WON
Life of this patent
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Abstract
A semiconductor device includes an active region tilted at an angle with respect to a buried bit line. The buried bit line includes a metal silicide pattern and a metal pattern. The metal silicide pattern has a plurality of metal silicide films each disposed at a lower portion of the active region and corresponding to a bit line contact region. The metal pattern has a plurality of metal films. The metal silicide films and the metal films are alternately arranged and electrically coupled to each other.
Claims10
A semiconductor device comprising:
- an active region having a line shape that is oblique with respect to a buried bit line;
- a metal silicide pattern disposed in a bit line contact region, the bit line contact region being disposed in a lower portion of the active region;
- and
- a metal pattern including one or more metal films,
- wherein each metal pattern adjoins and is electrically coupled to the metal silicide pattern of the active region to form the buried bit line.
2 more elements
A semiconductor device comprising:
- a plurality of pillars, each pillar being an active region, the pillars being arranged in a matrix;
- a metal silicide pattern including a plurality of metal silicide films disposed in a lower portion of a corresponding pillar;
- and
- a metal pattern including a plurality of metal films,
- wherein the metal silicide pattern and the metal pattern alternate and are electrically coupled to each other to form a buried bit line.
2 more elements
Dependencies are inferred from the claim text.