Transistor amplifier circuit and integrated circuit
AssigneeNXP B.V.
InventorsViet Thanh Dinh, Tony Vanhoucke, Evelyne Gridelet, Anco Heringa, Jan Willem Slotboom, Dirk Klaassen
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AssigneeNXP B.V.
InventorsViet Thanh Dinh, Tony Vanhoucke, Evelyne Gridelet, Anco Heringa, Jan Willem Slotboom, Dirk Klaassen
Estimating the term…
Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region) of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region is separated from the second region by an intermediate region of a second conductivity type defining a first p-n junction with the first region and a second p-n junction with the second region, wherein the laterally extended region separates the portion from the second p-n junction, and wherein the transistor further comprises a substrate having a doped region of the second conductivity type, said doped region being in contact with and extending along the laterally extended second region and a further contact terminal connected to the doped region for draining minority charge carriers from the laterally extended second region. An amplifier circuit and IC including such transistors are also disclosed.
A transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region is separated from the second region by an intermediate region of a second conductivity type defining a first p-n junction with the first region and a second p-n junction with the second region, wherein the laterally extended region separates the portion from the second p-n junction, and wherein the transistor further comprises:
Dependencies are inferred from the claim text.