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US 2015/0145003 A1Published application
Finfet semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMark S. Rodder, Borna J. Obradovic, Robert C. Bowen
Life of this patent
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Abstract
FinFET semiconductor devices and methods of forming the same are provided. The finFET semiconductor devices may include an insulator layer, a bottom semiconductor layer on the insulator layer, a channel fin on the bottom semiconductor layer, a source region on the bottom semiconductor layer and adjacent a first side of the channel fin, and a drain region on the bottom semiconductor layer and adjacent a second side of the channel fin opposite the first side.
Claims20
A finFET semiconductor device, comprising:
- an insulator layer;
- a bottom semiconductor layer on the insulator layer, the bottom semiconductor layer comprising a first percentage of a first semiconductor material and a second semiconductor material;
- a channel fin on the bottom semiconductor layer, the channel fin comprising a second percentage of the first semiconductor material and the second semiconductor material, wherein the second percentage of the first semiconductor material in the channel fin is less than the first percentage of the first semiconductor material in the bottom semiconductor layer;
- a source region on the bottom semiconductor layer and adjacent a first side of the channel fin, the source region comprising a third percentage of the first semiconductor material and the second semiconductor material, wherein the third percentage of the first semiconductor material in the source region is greater than the second percentage of the first semiconductor material in the channel fin;
- and
- a drain region on the bottom semiconductor layer and adjacent a second side of the channel fin that is opposite the first side, the drain region comprising a fourth percentage of the first semiconductor material and the second semiconductor material, wherein the fourth percentage of the first semiconductor material in the drain region is greater than the second percentage of the first semiconductor material in the channel fin.
3 more elements
A method of forming a finFET semiconductor device, comprising:
- forming a donor wafer including a first substrate, a first layer including SiyGe1-y on the substrate, and a second layer including SixGe1-x, x>y, on the first layer;
- forming a cleaving surface in the donor wafer between the substrate and at least a portion of the first layer;
- forming an insulator layer on a second substrate;
- bonding the donor wafer to the insulator layer with the second layer adjacent the insulator layer;
- and
- cleaving the donor wafer at the cleaving surface.
3 more elements
Dependencies are inferred from the claim text.