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US 2015/0144995 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorTetsuo TAKAHASHI
Life of this patent
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Abstract
In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other. Therefore, the present invention makes it possible to reduce snapback.
Claims34
A semiconductor device comprising:
- an n-type drift layer;
- a p-type base layer in a channel region on the n-type drift layer;
- an n-type emitter layer on the p-type base layer;
- a trench-gate electrode penetrating the p-type base layer and the n-type emitter layer and being in contact with the p-type base layer and the n-type emitter layer through a gate insulating film;
- a p-type anode layer in a region other than the channel region on the n-type drift layer;
- an emitter electrode connected to the n-type emitter layer and the p-type anode layer;
- a p-type collector layer below the n-type drift layer;
- an n-type cathode layer below the n-type drift layer;
- a collector electrode connected to the p-type collector layer and the n-type cathode layer;
- an n-type buffer layer surrounding the p-type collector layer;
- and
- a p-type separation layer surrounding the n-type cathode layer,
- wherein the n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other, and
- the p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other.
11 more elements
A semiconductor device comprising:
- an n-type drift layer;
- a p-type base layer in a channel region on the n-type drift layer;
- an n-type emitter layer on the p-type base layer;
- a trench-gate electrode penetrating the p-type base layer and the n-type emitter layer and being in contact with the p-type base layer and the n-type emitter layer through a gate insulating film;
- a p-type anode layer in a region other than the channel region on the n-type drift layer;
- an emitter electrode connected to the n-type emitter layer and the p-type anode layer;
- a p-type collector layer below the n-type drift layer;
- an n-type cathode layer below the n-type drift layer;
- a collector electrode connected to the p-type collector layer and the n-type cathode layer;
- an n-type buffer layer provided between the n-type drift layer and the p-type collector layer;
- a p-type separation layer provided between the n-type drift layer and the n-type cathode layer;
- and
- an embedded oxide film separating the p-type collector layer and the p-type separation layer from each other and separating the n-type cathode layer and the n-type buffer layer from each other.
10 more elements
A semiconductor device comprising:
- an n-type drift layer;
- a p-type base layer in a channel region on the n-type drift layer;
- an n-type emitter layer on the p-type base layer;
- a trench-gate electrode penetrating the p-type base layer and the n-type emitter layer and being in contact with the p-type base layer and the n-type emitter layer through a gate insulating film;
- a p-type anode layer in a region other than the channel region on the n-type drift layer;
- an emitter electrode connected to the n-type emitter layer and the p-type anode layer;
- a p-type collector layer below the n-type drift layer;
- an n-type cathode layer below the n-type drift layer;
- a collector electrode connected to the p-type collector layer and the n-type cathode layer;
- a floating region provided between the channel region and the p-type anode layer on the n-type drift layer and not connected to the emitter electrode;
- and
- a dummy trench-gate electrode or the trench-gate electrode separating the floating region from the channel region and the p-type anode layer,
- wherein the dummy trench-gate electrode is connected to the emitter electrode.
10 more elements
Dependencies are inferred from the claim text.