Power semiconductor device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsKee Ju Um, In Hyuk Song, Jae Hoon Park, Chang Su Jang, Ji Yeon Oh
Life of this patent
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Abstract
A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one direction in the active region; and at least one or more second trenches formed lengthwise in one direction in the termination region. The second trench has a depth deeper than that of the first trench.
Claims15
A power semiconductor device comprising:
- an active region having a current flowing through a channel in the active region at the time of a turn-on operation of the power semiconductor device;
- a termination region disposed in the vicinity of the active region;
- a plurality of first trenches extending lengthwise in one direction in the active region;
- and
- at least one or more second trenches extending lengthwise in one direction in the termination region,
- wherein the second trench has a depth deeper than that of the first trench.
A power semiconductor device comprising:
- an active region having a current flowing through a channel in the active region at the time of a turn-on operation of the power semiconductor device;
- a termination region disposed in the vicinity of the active region;
- a hole accumulating region disposed in the active region and below the channel of the active region;
- a plurality of first trenches extending lengthwise in one direction in the active region;
- and
- at least one or more second trenches extending lengthwise in one direction in the termination region,
- wherein the second trench is formed to a depth deeper than that of the first trench.
Dependencies are inferred from the claim text.