Nanostructure layer and light emitting diode with the same
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYUAN-HAO JIN, QUN-QING LI, SHOU-SHAN FAN
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Abstract
A nanostructure layer includes a number of nanostructures, wherein the number of nanostructures are aligned along a number of straight lines, a size of each of the number of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers to about 300 nanometers, and each of the number of nanostructures includes a core and a shell coated on the core. A light emitting diode with the nanostructure layer is also provided.
Claims13
A nanostructure layer comprising a plurality of nanostructures, wherein the plurality of nanostructures are aligned along a plurality of straight lines, a size of each of the plurality of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers to about 300 nanometers, and each of the plurality of nanostructures comprises a core and a shell coated on the core.
A nanostructure layer comprise a plurality of nanostructures, wherein the plurality of nanostructures are aligned along a plurality of straight lines, a size of each of the plurality of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures along the same straight line ranges from about 10 nanometers to about 300 nanometers, and each of the plurality of nanostructures is spherical.
A light emitting diode, comprising:
- a substrate;
- a first semiconductor layer, a second semiconductor layer, and an active layer stacked on the substrate in that sequence, wherein the first semiconductor layer is in contact with the substrate;
- a nanostructure layer dispersed on a surface of the second semiconductor layer away from the substrate, wherein the nanostructure layer comprises a plurality of nanostructures aligned along a plurality of straight lines, a size of each of the plurality of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers to about 300 nanometers, and the plurality of nanostructures are integrated with the second semiconductor layer to form an integrated structure;
- a transparent conductive layer covers the nanostructure layer;
- a first electrode electrically connected with the first semiconductor layer;
- and
- a second electrode electrically connected with the second semiconductor layer and the transparent conductive layer.
Dependencies are inferred from the claim text.