US 2015/0144975 A1 · LIGHT-EMITTING DEVICE

Abstract

A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the semiconductor stack, wherein the first amorphous portion has a first refractive index, the portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack.

Claims20

Dependent claims

A light-emitting device, comprising:

a substrate;
and
a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a bulk portion having a material different from that of the first amorphous portion and away from the semiconductor stack,
wherein the first amorphous portion has a first refractive index, the bulk portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

14/088,705Filed 25 Nov 2013

Published

28 May 2015

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10H 20/824
Materials of the light-emitting regions: comprising only Group III-V materials, e.g. GaP
H10H 20/817
Bodies: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H
Inorganic light-emitting semiconductor devices having potential barriers

Light-emitting device

Life of this patent

Light-emitting device

Life of this patent

Abstract

Claims20