Vertical Type AC-LED Device and Manufacturing Method Thereof

A vertical AC LED fabrication method, including the following steps:

• 1) providing a growth substrate, on which a light-emitting epitaxial layer is formed via epitaxial growth, which comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer from down up;
• 2) defining the size of a single light-emitting module and dividing the light-emitting epitaxial layer into a plurality of light-emitting modules, each comprising a forward conductive region, a backward conductive region and an isolating region between the two;
• 3) fabricating a first conductive structure and providing a conductive substrate to connect the light-emitting epitaxial layer to the conductive substrate;
• wherein, a first insulating layer is formed between the second semiconductor layer in the backward conductive region and the conductive substrate for mutual isolation;
• and an ohmic contact is formed between the second semiconductor layer in the forward conductive region and the conductive substrate;
• the first conductive structure connects the first semiconductor layer in the backward conductive region, the second semiconductor layer in the forward conductive region and the conductive substrate;
• 4) removing the growth substrate;
• 5) isolating the light-emitting epitaxial layers of the forward conductive region and the backward conductive region to form a first LED and a second LED;
• wherein the first LED corresponds to the backward conductive region and the second LED corresponds to the forward conductive region;
• and
• 6) fabricating a second conductive structure that connects the second semiconductor layer of the first LED and the first semiconductor layer of the second LED.

A vertical AC LED fabrication method, including the following steps:

• 1) providing a growth substrate, on which a light-emitting epitaxial layer is formed via epitaxial growth, which comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer from down up;
• 2) defining the size of a single light-emitting module and dividing the light-emitting epitaxial layer into a plurality of light-emitting modules, each comprising a forward conductive region, a backward conductive region and an isolating region between the two;
• 3) isolating the light-emitting epitaxial layers of the forward conductive region and the backward conductive region to form a first LED and a second LED, wherein the first LED corresponds to the backward conductive region and the second LED corresponds to the forward conductive region;
• 4) fabricating a first conductive structure and providing a conductive substrate to connect the light-emitting epitaxial layer to the conductive substrate;
• wherein, a first insulating layer is formed between the second semiconductor layer in the backward conductive region and the conductive substrate for mutual isolation;
• and an ohmic contact is formed between the second semiconductor layer in the forward conductive region and the conductive substrate;
• the first conductive structure connects the first semiconductor layer of the first LED, the second semiconductor layer of the second LED and the conductive substrate;
• 5) removing the growth substrate;
• 6) fabricating a second conductive structure that connects the second semiconductor layer of the first LED and the first semiconductor layer of the second LED.