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US 2015/0144964 A1Published application
Silicon carbide epi-wafer and method of fabricating the same
AssigneeLG Innotek Co., Ltd.
InventorsSeokMin Kang, Jihye Kim, Ickchan Kim
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Abstract
A method of fabricating an epi-wafer includes providing a wafer in a susceptor, performing a surface treatment on the wafer by heating the susceptor and supplying a surface treatment gas, and growing an epi-layer on the wafer. An epi-wafer includes a wafer, and an epi-layer formed on the wafer. Surface defects of the wafer are 0.5 ea/cm2 or less.
Claims5
An epi-wafer comprising:
- a wafer;
- and
- an epi-layer formed on the wafer,
- wherein surface defects of the wafer are 0.5 ea/cm2 or less.
1 more element
Dependencies are inferred from the claim text.