Complementarily strained finfet structure
AssigneeQUALCOMM Incorporated
InventorsKern RIM, Jeffrey Junhao XU, Stanley Seungchul SONG
Life of this patent
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Abstract
A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an re-channel fin. The n-channel fin may include a second material having a tensile strain that is lattice mismatched relative to the semiconductor substrate. The p-type device and the n-type device cooperate to form the complementary FinFET device.
Claims20
A method for fabricating a complementary fin field effect transistor (FinFET) device on a semiconductor substrate, comprising:
- processing a first material having a compressive strain to fabricate a p-type fin device on the semiconductor substrate;
- and
- processing a second material having a tensile strain to fabricate an n-type fin device on the semiconductor substrate, in which the p-type fin device and the n-type fin device cooperate to form the complementary FinFET device.
A complementary fin field-effect transistor (FinFET) device, comprising:
- a p-type device having a p-channel fin comprising a first material that is lattice mismatched relative to a semiconductor substrate, the first material having a compressive strain;
- and
- an n-type device having an n-channel fin comprising a second material having a tensile strain and being lattice mismatched relative to the semiconductor substrate, in which the p-type device and the n-type device cooperate to form the complementary FinFET device.
A method for fabricating a complementary fin field effect transistor (FinFET) device on a semiconductor substrate, comprising:
- the step for fabricating a p-type device having a p-channel fin comprising a first material having a compressive strain and being lattice mismatched relative to the semiconductor substrate;
- and
- the step for fabricating an n-type device having an n-channel fin comprising a second material having a tensile strain and being lattice mismatched relative to the semiconductor substrate, in which the p-type device and the n-type device cooperate to form the complementary FinFET device.
A complementary fin field-effect transistor (FinFET) device, comprising:
- a p-type device having means for carrying current comprising a first material that is lattice mismatched relative to a semiconductor substrate, the first material having a compressive strain;
- and
- an n-type device having means for carrying current comprising a second material having a tensile strain and being lattice mismatched relative to the semiconductor substrate, in which the p-type device and the n-type device cooperate to form the complementary FinFET device.
Dependencies are inferred from the claim text.