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US 2015/0144958 A1Published application
Methods of forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods
AssigneeSoitec
InventorChristiaan J. Werkhoven
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Abstract
Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride at one or more surfaces of the substrate, and a layer of GaN bonded to the molybdenum nitride.
Claims20
A semiconductor structure, comprising:
- a substrate comprising molybdenum;
- molybdenum nitride at an at least substantially planar surface of the substrate;
- and
- a layer of GaN directly bonded to the molybdenum nitride.
1 more element
A semiconductor structure, comprising:
- a molybdenum substrate;
- a layer of molybdenum nitride at a surface of the substrate;
- a first layer of III/V semiconductor material directly, molecularly bonded to the molybdenum nitride;
- and
- at least one additional layer of III/V semiconductor material epitaxially grown over the first layer of III/V semiconductor material on a side thereof opposite the layer of molybdenum nitride.
2 more elements
Dependencies are inferred from the claim text.