Isolated Gate Field Effect Transistor and Manufacture Method Thereof
AssigneeDynax Semiconductor, Inc.
InventorKai Cheng
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Abstract
An isolated gate field effect transistor and the manufacture method thereof. The isolated gate field effect transistor includes a substrate; a nitride transistor structure arranged on the substrate; a dielectric layer on the nitride transistor structure, where the dielectric layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer and material of the second dielectric layer includes metal; a groove formed in a gate region and at least partially through the dielectric layer; a metal gate formed in the groove; and a source electrode and a drain electrode located at two ohmic contact regions.
Claims15
An insulating gate field effect transistor, comprising:
- a substrate;
- a nitride transistor structure arranged on the substrate;
- a dielectric layer on the nitride transistor structure, wherein the dielectric layer comprises a first dielectric layer on the nitride transistor structure, a second dielectric layer on the first dielectric layer, and a third dielectric layer on the second dielectric layer,
- wherein material of the second dielectric layer comprises metal,
- a gate region and two ohmic contact regions respectively located at two sides of the gate region are defined on the dielectric layer, and each of the two ohmic contact regions is through the dielectric layer;
- a groove formed in the gate region and at least partially through the dielectric layer;
- a metal gate formed in the groove;
- and
- a source electrode and a drain electrode located at the two ohmic contact regions.
Dependencies are inferred from the claim text.