Thin film transistor structure having big channel-width and tft substrate circuit

A TFT substrate circuit, comprising:

• a plurality of gate lines arranged in a horizontal direction;
• a plurality of source lines arranged in a perpendicular direction;
• a plurality of pixel electrodes respectively located in a matrix grid which formed by the plurality of gate lines and the plurality of source lines;
• and
• a plurality of TFTs, each of the TFTs respectively corresponds to one of the pixel electrodes, and the TFT substrate circuit is characterized in that:
• each of the TFT structures comprising:
• a gate electrically connecting with one of the gate lines;
• a source electrically connecting with one of the source lines;
• and
• a drain electrically connecting with one of the pixel electrodes;
• wherein the source and the drain are disposed on the same plane, and are respectively symmetrical and corresponding to each other forming as a double spiral arrangement;
• and the area between the source and the drain forms a channel.

A TFT structure having big channel-width, characterized in that:

• the TFT structure comprising:
• a gate electrically connecting with one of the gate lines;
• a source electrically connecting with one of the source lines;
• and
• a drain electrically connecting with one of the pixel electrodes;
• wherein the source and the drain are disposed on the same plane, and are respectively symmetrical and corresponding to each other forming as a double spiral arrangement;
• and the area between the source and the drain forms a channel.