US 2015/0144945 A1Published application

Display device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsKoji KUSUNOKI, Hiroyuki MIYAKE

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Abstract

A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal oxide film over the gate insulating film and in contact with one of the pair of conductive films, an inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. A first gate line serving also as a gate electrode is connected so as to be able to select three sub-pixels of four sub-pixels, and a second gate line is connected so as to be able to select the remaining one of the four sub-pixels and also one sub-pixel in the next row.

Claims12

Dependent claims

A display device comprising:

a first pixel;
and
a second pixel;
a first wiring;
a second wiring;
and
a third wiring,
wherein each of the first pixel and the second pixel comprises a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel each comprising a transistor,
wherein the first wiring is electrically connected to a gate of the transistor of the first sub-pixel of the first pixel, a gate of the transistor of the second sub-pixel of the first pixel, and a gate of the transistor of the third sub-pixel of the first pixel,
wherein the second wiring is electrically connected to a gate of the transistor of the fourth sub-pixel of the first pixel and a gate of the transistor of the fourth sub-pixel of the second pixel, and
wherein the third wiring is electrically connected to one of a source and a drain of the transistor of the fourth sub-pixel of the first pixel and one of a source and a drain of the transistor of the second sub-pixel of the second pixel.

8 more elements

A display device comprising:

a first pixel;
and
a second pixel;
a first wiring;
a second wiring;
and
a third wiring,
wherein each of the first pixel and the second pixel comprises a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel each comprising a transistor,
wherein the first wiring is electrically connected to a gate of the transistor of the first sub-pixel of the first pixel, a gate of the transistor of the second sub-pixel of the first pixel, and a gate of the transistor of the third sub-pixel of the first pixel,
wherein the second wiring is electrically connected to a gate of the transistor of the fourth sub-pixel of the first pixel and a gate of the transistor of the fourth sub-pixel of the second pixel,
wherein the third wiring is electrically connected to one of a source and a drain of the transistor of the fourth sub-pixel of the first pixel and one of a source and a drain of the transistor of the second sub-pixel of the second pixel,
wherein the third wiring extends in a direction,
wherein the first sub-pixel of the first pixel comprises a first pixel electrode between the first wiring and the second wiring in the direction,
wherein the second sub-pixel of the first pixel comprises a second pixel electrode between the first wiring and the second wiring in the direction,
wherein the third sub-pixel of the first pixel comprises a third pixel electrode between the first wiring and the second wiring in the direction, and
wherein the fourth sub-pixel of the first pixel comprises a fourth pixel electrode between the third pixel electrode and the second wiring in the direction.

13 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/551,914Filed 24 Nov 2014
Priority: JP 2013-24517227 Nov 2013
Published: 28 May 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

G02F 1/136286
Active matrix addressed cells: wiring, e.g. gate line, drain line
G02F 1/1368
Active matrix addressed cells: in which the switching element is a three-electrode device
H10D 30/6704
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Family

US 9,880,437 B2Related patent
US 2015/0144945 A1This patent

From the US filing history. Foreign family members aren’t listed.

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