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US 2015/0144944 A1Published application
Array Substrate Including Oxide Thin Film Transistor and Method of Fabricating the Same
AssigneeLG Display Co., Ltd.
InventorsHee-Jung YANG, Dong-Sun KIM, Won-Joon HO, A-Ra KIM
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Abstract
An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer.
Claims19
An array substrate comprising:
- a gate barrier layer on a substrate;
- a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region;
- a gate insulating layer on the gate line;
- an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region;
- and
- a source electrode and a drain electrode spaced apart from each other on the active layer.
3 more elements
A method of fabricating a substrate, comprising:
- forming a gate barrier layer and a gate line sequentially on the substrate, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region;
- forming a gate insulating layer on the gate line;
- forming an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region;
- and
- forming a source electrode and a drain electrode spaced apart from each other on the active layer.
2 more elements
Dependencies are inferred from the claim text.