Ultraviolet semiconductor light-emitting device and fabrication method

A method of fabricating a UV light-emitting device with wavelengths of about 100-380 nm, the method comprising:

• (1) fabricating an n-type conductive layer, a light-emitting layer, a p-type conductive layer over a growth substrate and forming a light-emitting epitaxial layer having one side as a light-emitting surface and another side as a non-light-emitting surface;
• (2) fabricating a tunneling junction over the non-light-emitting surface;
• (3) patterning the tunneling junction including etching an area of the tunneling junction and the light-emitting epitaxial layer to expose a portion of the light-emitting epitaxial layer surface;
• (4) fabricating an optical phase matching layer over the exposed light-emitting epitaxial layer surface;
• and
• (5) fabricating a reflecting layer over the tunneling junction and the optical phase matching layer.

A system comprising a plurality of UV semiconductor light-emitting devices, each device comprising:

• a light-emitting epitaxial layer having one side as a light-emitting surface and another side as a non-light-emitting surface and comprising an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer;
• a tunneling junction at the non-light-emitting side and comprising a patterned structure having openings to expose the light-emitting epitaxial layer;
• an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light;
• and
• a reflecting layer covering the tunneling junction and the optical phase matching layer.