Laterally-Injected Light-Emitting Diode and Laser Diode
AssigneeSandia Corporation
InventorsMary A. Miller, Mary H. Crawford, Andrew A. Allerman
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Abstract
A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.
Claims25
A laterally-injected light-emitting device, comprising:
- a p-type superlattice layer having a slanted end facet;
- an III-nitride multiple quantum well active layer deposited on the slanted end facet for laterally injecting holes from the p-type superlattice layer thereinto;
- and
- an n-type layer for injecting electrons into the III-nitride multiple quantum well active layer, thereby generating light emission from the active layer when the electrons and holes combine.
A laterally-injected light-emitting device, comprising;
- an III-nitride multiple quantum well active layer embedded laterally in a mesa heterostructure;
- an n-type layer on a side of the mesa that laterally injects electrons into the III-nitride multiple quantum well active layer;
- and
- a p-type layer on the opposing side of the mesa that laterally injects holes into the III-nitride multiple quantum well active layer, thereby generating light emission from the active layer when the electrons and holes combine.
Dependencies are inferred from the claim text.