Plasma Processing Apparatus and Plasma Processing Method
AssigneeHitachi High-Technologies Corporation
InventorsShunsuke Kanazawa, Naoki Yasui, Michikazu Morimoto, Yasuo Ohgoshi
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AssigneeHitachi High-Technologies Corporation
InventorsShunsuke Kanazawa, Naoki Yasui, Michikazu Morimoto, Yasuo Ohgoshi
Estimating the term…
A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.
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A plasma processing apparatus comprising:
A plasma processing method, comprising:
Dependencies are inferred from the claim text.