Method for in-situ chamber clean using carbon monoxide (co) gas utlized in an etch processing chamber

A method for in-situ chamber dry cleaning a processing chamber, comprising:

• exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first plasma formed from a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide;
• exposing the chamber component disposed within the processing chamber in absence of the substrate disposed therein to a second plasma formed from a second cleaning gas mixture comprising at least a boron containing gas and a fluorine containing gas;
• and
• exposing the chamber component disposed within the processing chamber in absence of the substrate disposed therein to a third plasma formed from a third cleaning gas mixture comprising at least a fluorine-carbon containing gas.

A method for in-situ chamber dry cleaning a processing chamber, comprising:

• supplying a first cleaning gas mixture comprising carbon monoxide or carbon dioxide into the processing chamber in absence of a substrate disposed therein, wherein a chamber component disposed within the processing chamber has a refractory metal and/or metal silicide residues deposited thereon;
• supplying a second cleaning gas mixture comprising at least a boron containing gas and a fluorine containing gas into the processing chamber in absence of the substrate disposed therein;
• and
• supplying a third cleaning gas mixture comprising at least a fluorine-carbon containing gas into the processing chamber in absence of the substrate disposed therein.