Single-mode quantum cascade lasers with enhanced tuning range
AssigneePrinceton University
InventorsMei Chai Zheng, Qiang Liu, Claire F. Gmachl
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Abstract
In one aspect, semiconductor lasers are provided. A semiconductor laser described herein comprises substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm.
Claims25
A single-mode laser comprising:
- a substrate;
- and
- a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm operable for expanding a single-mode emission tuning range of the single-mode laser.
A method of tuning laser emission comprising:
- providing a single-mode semiconductor laser including a substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm;
- and
- changing temperature of the second arm independently from the first arm to alter single-mode emission wavelength.
Dependencies are inferred from the claim text.