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US 2015/0104950 A1Published application
Plasma processing method
AssigneeTokyo Electron Limited
InventorShunichi MIKAMI
Life of this patent
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Abstract
A plasma processing method for processing a silicon containing film formed on a substrate including a step of removing a reaction product with a first plasma formed from a first gas containing halogen, hydrogen, and carbon in a case where the reaction product is formed when performing an etching process on the silicon containing film by using an etching mask having an etching pattern.
Claims7
A plasma processing method for processing a silicon containing film formed on a substrate, comprising a step of:
- removing a reaction product with a first plasma formed from a first gas containing halogen, hydrogen, and carbon in a case where the reaction product is formed when performing an etching process on the silicon containing film by using an etching mask having an etching pattern.
Dependencies are inferred from the claim text.