Method of Manufacturing Semiconductor Device

A method of manufacturing a semiconductor device including processing a semiconductor substrate using a plasma etching apparatus provided with a processing chamber, the semiconductor substrate having at least a conductive film and an uneasily-etched material formed thereabove, the method comprising:

• forming a precoat layer along an inner wall of the processing chamber;
• etching the conductive film after loading the semiconductor substrate into the processing chamber, and causing deposition of a reactive product of the conductive film along the precoat layer;
• forming a lift-off layer along the inner wall of the processing chamber with the semiconductor substrate loaded in the processing chamber;
• etching the uneasily-etched material and causing deposition of a reactive product of the uneasily-etched material along the lift-off layer;
• and
• cleaning, by removing the reactive product of the uneasily-etched material and the reactive product of the conductive film by removing the lift-off layer and the precoat layer, the inner wall of the processing chamber after the semiconductor substrate is unloaded from the plasma etching apparatus.

A method of manufacturing a semiconductor device including processing a semiconductor substrate using a plasma etching apparatus provided with a processing chamber, the semiconductor substrate having at least an uneasily-etched material formed thereabove, the method comprising:

• forming a first lift-off layer along an inner wall of the processing chamber with the semiconductor substrate loaded in the processing chamber;
• etching an upper portion of the uneasily-etched material and causing deposition of a reactive product of the uneasily-etched material along the first lift-off layer;
• forming a second lift-off layer along the inner wall of the processing chamber with the semiconductor substrate loaded in the processing chamber;
• etching a lower portion of the uneasily-etched material and causing deposition of a reactive product of the uneasily-etched material along the second lift-off layer;
• and
• cleaning, by removing the reactive product of the uneasily-etched material by removing the first and the second lift-off layers, the inner wall of the processing chamber after the semiconductor substrate is unloaded from the plasma etching apparatus.