Barrier chemical mechanical planarization composition and method thereof

A polishing method for chemical mechanical planarization of a semiconductor substrate having at least one surface having conductive metal lines, vias or trenches, a metal-containing barrier layer and a dielectric layer or low-k on thereof, comprising the steps of:

• c) contacting the at least one surface with a polishing pad;
• d) delivering a polishing composition to the at least one surface, the polishing composition comprising:
• abrasive;
• organic polymer containing ethylene oxide repeating units having the general molecular structure of
• wherein n refers to the total numbers of the repeating unit ranging from 6,818 to 181,817;
• the organic polymer containing ethylene oxide repeating units having molecular weights ranging from 100,000 to 8,000,000 and concentration ranging from about 5 ppm to about 5,000 ppm;
• oxidizing agent;
• corrosion inhibitor;
• and
• chelator;
• and
• C) polishing the substrate with the polishing composition.