Method and apparatus for dicing wafers having thick passivation polymer layer

A system for dicing a semiconductor wafer comprising a plurality of integrated circuits, the system comprising:

• a factory interface;
• a laser scribe apparatus coupled with the factory interface and comprising a dual focus lens;
• and
• a plasma etch chamber coupled with the factory interface.

A method of dicing a monocrystalline silicon substrate comprising a front surface having a plurality of integrated circuits thereon, the method comprising:

• forming a mask layer above the front surface of the monocrystalline silicon substrate, wherein the front surface of the monocrystalline silicon substrate comprises a polyimide passivation layer disposed between partially exposed metal pillar/solder bump pairs, and wherein the mask layer is formed on the polyimide passivation layer and the metal pillar/solder bump pairs;
• laser scribing the mask layer, the polyimide passivation layer, and the front surface of the monocrystalline silicon substrate to provide scribe lines in the mask layer, in the polyimide passivation layer, and partially into the monocrystalline silicon substrate, the laser scribing involving use of a dual focus lens to provide a dual focus spot beam, wherein the laser scribing is performed with a femto-second based laser;
• and
• plasma etching the monocrystalline silicon substrate through the scribe lines to singulate the integrated circuits.