Noise Decoupling Structure with Through-Substrate Vias
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chung Chen, Chewn-Pu Jou, Sally Liu
Life of this patent
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Abstract
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
Claims20
A method comprising:
- providing a substrate, the substrate having a first side and a second side;
- forming a first guard ring around a circuit region on the first side of the substrate, the first guard ring comprising a doped region of the substrate, the first guard ring having a first conductivity type, the circuit region having a second conductivity type;
- forming an isolation trench around the circuit region on the first side of the substrate;
- forming through vias, the through vias extending through the isolation trench to the second side of the substrate;
- and
- forming a conductive layer over the second side of the substrate, the conductive layer being electrically coupled to the through vias, the conductive layer being over substantially an entirety of the second side of the substrate opposite of the circuit region.
A method comprising:
- providing a substrate, the substrate having a first side and a second side;
- forming active devices in an active device region on the first side of the substrate, the substrate in the active device region having a first conductivity type;
- forming an isolation trench around the active devices on the first side of the substrate;
- forming a first guard ring around the active devices, the first guard ring having a second conductivity type;
- forming through substrate vias extending from the first side of the substrate to the second side of the substrate, the through vias extending through the isolation trench, the through vias arranged in a pattern surrounding the active device region;
- and
- forming a conductive layer over the second side of the substrate, the conductive layer being electrically coupled to the through vias, the conductive layer extending from a first through via to a second through via, wherein the active device region is interposed between the first through via and the second through via.
A method comprising:
- providing a substrate, the substrate having a circuit region on a first side of the substrate, the circuit region having a first well, the first well having a first conductivity type;
- forming an isolation trench around the circuit region on the first side of the substrate;
- forming a first guard ring around the circuit region, the first guard ring having a second conductivity type;
- forming through vias extending through the isolation trench;
- and
- forming a conductive plate over a second side of the substrate, the conductive plate being electrically coupled to the through vias, the conductive plate covering a portion of the second side of the substrate opposing the circuit region.
Dependencies are inferred from the claim text.